2SB1302-R datasheet(1/3 Pages) KEXIN

部件名	2SB1302-R

功能描述	PNP Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SB1302

■

Features

●

Low collector-to-emitter saturation voltage.

●

Large current capacity.

●

Fast switching speed.

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-25

Collector - Emitter Voltage

VCEO

-20

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-5

Collector Current - Pulse

ICP

-8

Collector Power Dissipation

PC

1.3

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 uA， IE=0

-25

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, RBE=∞

-20

Emitter - base breakdown voltage

VEBO

IE= -100 uA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -20V , IE=0

-0.5

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.5

Collector-emitter saturation voltage

VCE(sat) IC=-3 A, IB=-60 mA

-0.25 -0.5

Base - emitter saturation voltage

VBE(sat) IC=-6 A, IB=-60 mA

-1

-1.3

VCE= -2V, IC= -500 mA

100

400

VCE= -2V, IC= -4 A

60

Turn-ON Time

ton

40

Storage Time

tstg

200

Fall Time

tf

10

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

60

pF

Transition frequency

fT

VCE= -5V, IC= -200 mA

320

MHz

See specified Test Circuit.

ns

V

uA

V

DC current gain

hFE

■

Classification of hfe(1)

Type

2SB1302-R

2SB1302-S

2SB1302-T

Range

100-200

140-280

200-400

Marking

BJ R*

BJ S*

BJ T*

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