2SB1574-R datasheet(1/1 Pages) KEXIN

部件名	2SB1574-R

功能描述	PNP Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1574

■

Features

●

Collector breakdown voltage: VCBO/VCEO = –50V

●

Collector current: IC = –2A

●

For low-frequency output amplification

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-50

Collector - Emitter Voltage

VCEO

-50

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-2

Collector Current - Pulse

ICP

-3

Collector Power Dissipation

PC

10

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 uA， IE=0

-50

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-50

Emitter - base breakdown voltage

VEBO

IE= -100 uA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-1 A, IB=-50 mA

-0.2

-0.3

Base - emitter saturation voltage

VBE(sat) IC=-1 A, IB=-50 mA

-0.85 -1.2

VCE= -2V, IC= -200 mA

120

340

VCE= -2V, IC= -1 A

60

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

45

60

pF

Transition frequency

fT

VCE= -10V, IE= 50 mA,f=200MHz

80

MHz

DC current gain

hFE

V

uA

■

Classification of hfe(1)

Type

2SB1574-R

2SB1574-S

Range

120-240

170-340

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