2SD1257-R datasheet(1/3 Pages) KEXIN

部件名	2SD1257-R

功能描述	NPN Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

2SD1257

■

Features

●

Satisfactory linearity of foward current transfer ratio hFE

●

Low collector to emitter saturation voltage VCE(sat)

●

Large collector current IC

●

Complementary to 2SB934

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

130

Collector - Emitter Voltage

VCEO

80

Emitter - Base Voltage

VEBO

7

Collector Current - Continuous

IC

7

Collector Current - Pulse

ICP

15

Collector Power Dissipation

Tc = 25℃

40

Ta = 25℃

1.3

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

PC

W

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

130

Collector- emitter breakdown voltage

VCEO

Ic= 10 mA， IB= 0

80

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

7

Collector-base cut-off current

ICBO

VCB= 100 V , IE= 0

10

Emitter cut-off current

IEBO

VEB= 5V , IC=0

50

Collector-emitter saturation voltage

VCE(sat) IC=5 A, IB=250mA

0.5

Base - emitter saturation voltage

VBE(sat) IC=5 A, IB=250mA

1.5

hFE(1)

VCE= 2V, IC= 100mA

45

hFE(2)

VCE= 2V, IC= 3 A

60

260

Turn-on time

ton

0.5

Storage time

tstg

1.5

Fall time

tf

0.1

Transition frequency

fT

VCE= 10V, IC= 500mA,f=10MHz

30

MHz

IC = 3A, IB1 = 300mA, IB2 = –

300mA,

VCC = 50V

us

DC current gain

V

uA

■

Classification of hfe(2)

Type

2SD1257-R

2SD1257-Q

2SD1257-P

Range

60-120

90-180

130-260

类似零件编号 - 2SD1257-R

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Inchange Semiconductor ...	2SD1257-251	296Kb / 2P	Silicon NPN Power Transistor
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