2SD1902-R datasheet(1/3 Pages) KEXIN

部件名	2SD1902-R

功能描述	NPN Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

NPN Transistors

2SD1902

■

Features

●

High reliablity

●

Complementary to 2SB1266

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

60

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

3

Collector Current - Pulse

ICP

8

Collector Power Dissipation

PC

1.65

W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 1 mA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 5 mA， RBE= ∞

60

Emitter - base breakdown voltage

VEBO

IE= 1 mA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=2 A, IB=200mA

0.4

1

Base - emitter saturation voltage

VBE(sat) IC=2 A, IB=200mA

1.2

Base - emitter voltage

VBE

VCE= 5V, IC= 500mA

0.7

1

VCE= 5V, IC= 500mA

70

280

VCE= 5V, IC= 3 A

20

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

110

pF

Transition frequency

fT

VCE= 5V, IC= 500 mA

MHz

DC current gain

hFE

V

uA

V

■

Classification of hfe(1)

Type

2SD1902-Q

2SD1902-R

2SD1902-S

Range

70-140

100-200

140-280

40

类似零件编号 - 2SD1902-R

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	2SD1902	106Kb / 4P	AF Power Amp Applications

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