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CDP1823C/3 数据表(PDF) 5 Page - Intersil Corporation

部件名 CDP1823C/3
功能描述  High-Reliability CMOS 128-Word x 8-Bit Static RAM
PDF  6 Pages
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

CDP1823C/3 数据表(HTML) 5 Page - Intersil Corporation

  CDP1823C/3 Datasheet HTML 1Page - Intersil Corporation CDP1823C/3 Datasheet HTML 2Page - Intersil Corporation CDP1823C/3 Datasheet HTML 3Page - Intersil Corporation CDP1823C/3 Datasheet HTML 4Page - Intersil Corporation CDP1823C/3 Datasheet HTML 5Page - Intersil Corporation CDP1823C/3 Datasheet HTML 6Page - Intersil Corporation  
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6-35
Data Hold Time from MWR (Note 1)
tDH
5
50
-
70
-
ns
Chip Select Setup
tCS
5
210
-
300
-
ns
NOTES:
1. Limits designate 100% testing. All other limits are designer’s parameters under given test conditions and do not represent 100% testing.
2. Minimum timing to allow the indicated function to occur.
Write Cycle Dynamic Electrical Specifications tR, tF = 10ns, CL = 50pF (Continued)
PARAMETER
SYMBOL
VDD
(V)
LIMITS
UNITS
+25oC, -55oC
+125oC
(NOTE 2)
MIN
MAX
(NOTE 2)
MIN
MAX
ADDRESS
tWC
tAS
tAH
tCS
tWW
tDH
VALID DATA
CS1, CS4
CS2, CS3, CS5
MWR
BUS 0-7
tDS
NOTE:
1. MRD must be high during write operation.
FIGURE 2. WRITE CYCLE TIMING WAVEFORMS
Data Retention Specifications
PARAMETER
SYMBOL
TEST
CONDITIONS
LIMITS
UNITS
VDR
(V)
VDD
(V)
+25oC, -55oC
+125oC
MIN
MAX
MIN
MAX
Minimum Data Retention Voltage
(Note 1)
VDR
-
-
-
2
-
2.5
V
Data Retention Quiescent Current
IDD
2
-
-
100
-
400
µA
Chip Deselect to Data Retention Time
tCDR
-
5
450
-
650
-
ns
Recovery to Normal Operation Time
tRC
-
5
450
-
650
-
ns
NOTE:
1. Limits designate 100% testing. All other limits are designer’s parameters under given test conditions and do not represent 100% testing.
CDP1823C/3



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