4-39

PARAMETER

SYMBOL

TYPE

TEST CONDITIONS

LIMITS

UNITS

MIN

MAX

Drain-Source

Breakdown Volts

(Note 4,6)

BVDSS

FRE160D, R

VGS = 0, ID = 1mA

100

-

V

(Note 5,6)

BVDSS

FRE160H

VGS = 0, ID = 1mA

95

-

V

Gate-Source

Threshold Volts

(Note 4,6)

VGS(th)

FRE160D, R

VGS = VDS, ID = 1mA

2.0

4.0

V

(Note 3,5,6)

VGS(th)

FRE160H

VGS = VDS, ID = 1mA

1.5

4.5

V

Gate-Body

Leakage Forward

(Note 4,6)

IGSSF

FRE160D, R

VGS = 20V, VDS = 0

-

100

nA

(Note 5,6)

IGSSF

FRE160H

VGS = 20V, VDS = 0

-

200

nA

Gate-Body

Leakage Reverse

(Note 2,4,6)

IGSSR

FRE160D, R

VGS = -20V, VDS = 0

-

100

nA

(Note 2,5,6)

IGSSR

FRE160H

VGS = -20V, VDS = 0

-

200

nA

Zero-Gate Voltage

Drain Current

(Note 4,6)

IDSS

FRE160D, R

VGS = 0, VDS = 80V

-

25

µA

(Note 5,6)

IDSS

FRE160H

VGS = 0, VDS = 80V

-

100

µA

Drain-Source

On-State Volts

(Note 1,4,6)

VDS(on)

FRE160D, R

VGS = 10V, ID = 41A

-

2.15

V

(Note 1,5,6)

VDS(on)

FRE160H

VGS = 16V, ID = 41A

-

3.23

V

Drain-Source

On Resistance

(Note 1,4,6)

RDS(on)

FRE160D, R

VGS = 10V, ID = 26A

-

.050

Ω

(Note 1,5,6)

RDS(on)

FRE160H

VGS = 14V, ID = 26A

-

.075

Ω

NOTES:

1. Pulse test, 300

µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13

5. Gamma = 1000KRAD(Si). Neutron = 3E13

6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 6/11/89 on TA 17661 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,

PA 19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988

FRE160D, FRE160R, FRE160H