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FSF055R 数据表(PDF) 2 Page - Intersil Corporation

部件名 FSF055R
功能描述  25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
PDF  8 Pages
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

FSF055R 数据表(HTML) 2 Page - Intersil Corporation

  FSF055R Datasheet HTML 1Page - Intersil Corporation FSF055R Datasheet HTML 2Page - Intersil Corporation FSF055R Datasheet HTML 3Page - Intersil Corporation FSF055R Datasheet HTML 4Page - Intersil Corporation FSF055R Datasheet HTML 5Page - Intersil Corporation FSF055R Datasheet HTML 6Page - Intersil Corporation FSF055R Datasheet HTML 7Page - Intersil Corporation FSF055R Datasheet HTML 8Page - Intersil Corporation  
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3-96
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSF055D, FSF055R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
60
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
60
V
Continuous Drain Current
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
25
A
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
25
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
200
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
125
W
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
50
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.14
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
200
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
25
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
200
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
60
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 48V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 25A
-
-
0.525
V
Drain to Source On Resistance
rDS(ON)12
ID = 25A,
VGS = 12V
TC = 25
oC
-
0.014
0.020
Ω
TC = 125
oC
-
-
0.029
Ω
Turn-On Delay Time
td(ON)
VDD = 30V, ID = 25A,
RL = 1.2Ω, VGS 12V,
RGS = 2.35Ω
-
-
150
ns
Rise Time
tr
-
-
180
ns
Turn-Off Delay Time
td(OFF)
-
-
140
ns
Fall Time
tf
-
-
60
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 30V,
ID = 25A
-
-
290
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
140
190
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
15
nC
Gate Charge Source
Qgs
-32
49
nC
Gate Charge Drain
Qgd
-61
89
nC
Plateau Voltage
V(PLATEAU) ID = 25A, VDS = 15V
-
6
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
4300
-
pF
Output Capacitance
COSS
-
2000
-
pF
Reverse Transfer Capacitance
CRSS
-
500
-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.88
oC/W
Thermal Resistance Junction to Ambient
R
θJA
--
40
oC/W
FSF055D, FSF055R



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