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FSF9250R 数据表(PDF) 3 Page - Intersil Corporation

部件名 FSF9250R
功能描述  15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
PDF  8 Pages
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

FSF9250R 数据表(HTML) 3 Page - Intersil Corporation

  FSF9250R Datasheet HTML 1Page - Intersil Corporation FSF9250R Datasheet HTML 2Page - Intersil Corporation FSF9250R Datasheet HTML 3Page - Intersil Corporation FSF9250R Datasheet HTML 4Page - Intersil Corporation FSF9250R Datasheet HTML 5Page - Intersil Corporation FSF9250R Datasheet HTML 6Page - Intersil Corporation FSF9250R Datasheet HTML 7Page - Intersil Corporation FSF9250R Datasheet HTML 8Page - Intersil Corporation  
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3-217
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 15A
-0.6
-
-1.8
V
Reverse Recovery Time
trr
ISD = 15A, dISD/dt = 100A/µs
-
-
300
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
-200
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = -160V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = -12V, ID = 15A
-
-4.57
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = -12V, ID = 9A
-
0.290
Ω
NOTES:
1. Pulse test, 300
µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
µ)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
20
-200
Br
37
36
5
-200
Br
37
36
10
-160
Br
37
36
15
-100
Br
37
36
20
-40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
-120
-80
-40
0
010
15
20
25
5
VGS (V)
-160
-200
TEMP = 25oC
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
LET = 37MeV/mg/cm2, RANGE = 36
µ
LET = 26MeV/mg/cm2, RANGE = 43
µ
-300
-100
-10
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
FSF9250D, FSF9250R



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