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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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2SB1188-R 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1188-R 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 3 page  SMD Type www.kexin.com.cn 2 Transistors 2SB1188 PNP Transistor ■ Typical Characterisitics Fig.1 Grounded emitter propagation characteristics BASE TO EMITTER VOLTAGE : VBE (V) 0 −0.2 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 −0.4 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 VCE= −3V Ta=100°C 25°C −40°C Fig.2 Grounded emitter output characteristics −0.4 0 −0.8 −1.2 −1.6 −2 0 −0.1 −0.2 −0.3 −0.4 −0.5 IB=0A −250µA −500µA −750µA −1mA −1.25mA −1.5mA −1.75mA −2mA −2.25mA −2.5mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25°C Fig.3 DC current gain vs. collector curren ( ) −5 −10 −20 −50 −100 −500 −1000 −2000 −200 50 20 100 200 500 Ta=25°C COLLECTOR CURRENT : IC (mA) VCE= −6V −3V −1V Fig.6 Collector-emitter saturation voltage vs. collector current ( ) −5 −10 −20 −50 −100 −500 −1000 −2000 −200 −20 −50 −100 −200 −500 lC/lB=10 COLLECTOR CURRENT : IC (mA) Ta=100°C 25°C −40°C Fig.5 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) −5 −10 −20 −50 −100 −500 −1000 −2000 −200 − 50 − 100 − 200 − 500 Ta=25°C IC/IB= 50 20 10 Fig.4 DC current gain vs. collector current ( ) 50 20 100 200 500 VCE= −3V COLLECTOR CURRENT : IC (mA) −5 −10 −20 −50 −100 −500 −1000 −2000 −200 Ta=100°C 25°C −25°C Fig.7 Base-emitter saturation voltage vs. collector current COLLETOR CURRENT : IC (mA) −5 −10 −20 −50 −100 −500 −1000 −2000 −200 −0.1 −0.05 −0.2 −0.5 −1 IC /IB=10 Ta=25°C Fig.8 Gain bandwidth product vs. emitter current Ta=25°C VCE= −5V EMITTER CURRENT : IE (mA) 5 10 20 50 100 500 1000 2000 200 50 100 200 500 Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Ta=25°C f=1MHz IE= 0A IC= 0A −0.5 −1 −2 −5 −10 −20 −30 10 20 50 200 300 100 Cib Cob |
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