2SB1386-R datasheet(1/3 Pages) KEXIN

部件名	2SB1386-R

功能描述	PNP Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

标志

1 / 3 page

SMD Type

Transistors

1

www.kexin.com.cn

2SB1386

Absolute Maximum Ratings Ta = 25

ti

n

U

g

n

it

a

R

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

V

e

g

a

tl

o

v

e

s

a

b

-r

o

t

c

e

ll

o

C

CBO

-30

V

e

g

a

tl

o

v

r

e

tt

i

m

e

-r

o

t

c

e

ll

o

C

CEO

-20

V

e

g

a

tl

o

v

e

s

a

b

-r

e

tt

i

m

E

EBO

-6

V

I

t

n

e

rr

u

c

r

o

t

c

e

ll

o

C

-5

A

I

)

e

s

l

u

P

(t

n

e

rr

u

c

r

o

t

c

e

ll

o

C

CP

*

-10

A

P

n

o

it

a

p

i

s

i

d

r

e

w

o

p

r

o

t

c

e

ll

o

C

0.5

W

0

5

1

j

T

e

r

u

t

a

r

e

p

m

e

t

n

o

it

c

n

u

J

T

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55 to +150

* Single pulse, Pw=10ms

Electrical Characteristics Ta = 25

Parameter

Symbol

Test onditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

BVCBO IC

V

0

3

-

A

0

5

-

=

Collector-emitter breakdown voltage

BVCEO IC

V

0

2

-

A

m

1

-

=

Emitter-base breakdown voltage

BVEBO IE

V

6

-

A

0

5

-

=

I

t

n

e

rr

u

c

ff

o

t

u

c

r

o

t

c

e

ll

o

C

CBO

VCB

A

5

.

0

-

V

0

2

-

=

I

t

n

e

rr

u

c

ff

o

t

u

c

r

e

tt

i

m

E

EBO

VEB

A

5

.

0

-

V

5

-

=

DC current transfer ratio

VCE(sat) IC=-4A,IB

V

1

-

A

1

.

0

-

=

Collector-emitter saturation voltage

hFE

VCE=-2V, IC

0

9

3

2

8

A

5

.

0

-

=

C

Output capacitance

ob

VCE=-6V, IE=50mA, f=30MHz

120

MHz

f

Transition frequency

T

VCB=-20V, IE

F

p

0

6

z

H

M

1

=

f

,

A

0

=

hFE Classification

Features

Low VCE(sat).

VCE(sat) = -0.35V (Typ.)

(IC/IB = -4A / -0.1A)

Excellent DC current gain

Epitaxial planar type

PNP silicon transistor

PNP Transistors

C

u

0.35

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

Type

2SB1386-P

2SB1386-Q

2SB1386-R

Range

82-180

120-270

180-390

Marking

BHP*

BHQ*

BHR*

类似零件编号 - 2SB1386-R

制造商	部件名	数据表	功能描述
Micro Commercial Compon...	2SB1386-R	376Kb / 4P	PNP Silicon Epitaxial Transistors
Micro Commercial Compon...	2SB1386-R	430Kb / 4P	PNP Silicon Epitaxial Transistors
DONGGUAN YOU FENG WEI E...	2SB1386-R	786Kb / 4P	PNP Transistors
Unisonic Technologies	2SB1386-R-AB3-B-R	200Kb / 5P	LOW FREQUENCY PNP TRANSISTOR
Unisonic Technologies	2SB1386-R-AB3-C-R	200Kb / 5P	LOW FREQUENCY PNP TRANSISTOR

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类似说明 - 2SB1386-R

制造商	部件名	数据表	功能描述
Weitron Technology	2N5401	720Kb / 4P	PNP Transistors
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NXP Semiconductors	PEMB10_PUMB10	626Kb / 15P	PNP/PNP resistor-equipped transistors; PNP/PNP resistor-equipped transistors; Rev. 3-3 January 2012