2SD602A-R-HF datasheet(1/1 Pages) KEXIN

部件名	2SD602A-R-HF

功能描述	NPN Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

■

Features

●

Low Collector to Emitter Saturation Voltage

●

Mini Type Package

●

Complimentary to 2SB710A-HF

0.4 +0.1

-0.1

2.9 +0.1

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.1

1.Base

2.Emitter

3.collector

1

2

3

Unit: mm

SOT-23

0.1 +0.05

-0.01

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

50

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

500

mA

Collector Power Dissipation

PC

200

mW

Thermal Resistance from Junction to Ambient

RΘJA

625

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 10 mA， IB= 0

50

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage (Note.1)

VCE(sat) IC=300 mA, IB=30mA

0.6

Base - emitter saturation voltage

(Note.1)

VBE(sat) IC=300 mA, IB=30mA

1.2

hFE(1)

VCE= 10V, IC= 150mA

85

340

hFE(2)

VCE= 10V, IC= 500mA

40

Collector output capacitance

Cob

VCB= 10V, IE=0,f=1MHz

15

pF

Transition frequency

fT

VCE= 10V, IC= 50mA,f=200MHz

200

MHz

DC current gain

(Note.1)

V

uA

V

Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■

Classification of hfe(1)

Type

2SD602A-Q-HF 2SD602A-R-HF 2SD602A-S-HF

Range

85-170

120-240

170-340

Marking

XQ F

XR F

XS F

●

Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

NPN Transistors

2SD602A-HF

类似零件编号 - 2SD602A-R-HF

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