数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

FSR1110D 数据表(PDF) 2 Page - Intersil Corporation

部件名 FSR1110D
功能描述  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

FSR1110D 数据表(HTML) 2 Page - Intersil Corporation

  FSR1110D Datasheet HTML 1Page - Intersil Corporation FSR1110D Datasheet HTML 2Page - Intersil Corporation FSR1110D Datasheet HTML 3Page - Intersil Corporation FSR1110D Datasheet HTML 4Page - Intersil Corporation FSR1110D Datasheet HTML 5Page - Intersil Corporation FSR1110D Datasheet HTML 6Page - Intersil Corporation FSR1110D Datasheet HTML 7Page - Intersil Corporation FSR1110D Datasheet HTML 8Page - Intersil Corporation FSR1110D Datasheet HTML 9Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSR1110D, FSR1110R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
1.0
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
0.6
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
3.0
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
1.25
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
0.5
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.01
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
3.0
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
1.0
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
3.0
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 80V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 1.0A
-
-
0.71
V
Drain to Source On Resistance
rDS(ON)12
ID = 0.6A,
VGS = 12V
TC = 25
oC
-
0.570
0.680
Ω
TC = 125
oC
-
-
1.09
Ω
Turn-On Delay Time
td(ON)
VDD = 50V, ID = 1.0A,
RL = 50Ω, VGS = 12V,
RGS = 7.5Ω
-
-
15
ns
Rise Time
tr
-
-
15
ns
Turn-Off Delay Time
td(OFF)
-
-
25
ns
Fall Time
tf
-
-
20
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 50V,
ID = 1.0A
-
-
14
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
8.7
9.7
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
0.54
nC
Gate Charge Source
Qgs
-
1.4
1.7
nC
Gate Charge Drain
Qgd
-
4.2
4.7
nC
Plateau Voltage
V(PLATEAU) ID = 1.0A, VDS = 15V
-
6
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
155
-
pF
Output Capacitance
COSS
-70-
pF
Reverse Transfer Capacitance
CRSS
-20-
pF
Thermal Resistance Junction to Ambient
R
θJA
-
-
100
oC/W
FSR1110D, FSR1110R



Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com