FSR1110D1 datasheet(4/9 Pages) INTERSIL

部件名	FSR1110D1

功能描述	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

PDF	9 Pages

Scroll/Zoom	100%

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

4 / 9 page

Typical Performance Curves

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

120

100

-10

-15

-20

-25

-5

VGS (V)

LET = 37MeV/mg/cm2, RANGE = 36

LET = 26MeV/mg/cm2, RANGE = 43

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

300

100

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

100A

30A

1E-7

1E-3

TC, CASE TEMPERATURE (

oC)

150

100

-50

1.2

1.0

0.8

0.6

0.4

0.2

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

100

0.1

1000

0.1

5ms

10ms

50ms

TC = 25

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

CHARGE

QGS

12V

QGD

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250ms,VGS = 12V, ID = 0.6A

FSR1110D, FSR1110R

FSR1110D1 数据表(PDF) 4 Page - Intersil Corporation

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