FSTYC9055R datasheet(4/8 Pages) INTERSIL

部件名	FSTYC9055R

功能描述	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

4 / 8 page

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Performance Curves Unless Otherwise Speciﬁed (Continued)

TC, CASE TEMPERATURE (

oC)

150

100

-50

100

-1

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

-10

-100

500

100

µs

1ms

10ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

-200

TC = 25

CHARGE

QGD

QGS

-12V

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250ms, VGS = -12V, ID = 41A

10-5

10-4

10-3

10-2

10-1

100

101

0.001

0.01

0.1

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x Z

θJC + TC

SINGLE PULSE

0.01

0.02

0.2

0.1

0.05

0.5

t, RECTANGULAR PULSE DURATION (s)

FSTYC9055D, FSTYC9055R

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