FSYA254R datasheet(4/8 Pages) INTERSIL

部件名	FSYA254R

功能描述	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

4 / 8 page

4-4

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING CURVE

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

TC, CASE TEMPERATURE (

oC)

150

100

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

10ms

µs

100ms

100

TC = 25

1000

CHARGE

QGD

QGS

12V

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250

µs, VGS = 12V, ID = 14A

10-5

10-4

10-3

10-2

10-1

100

101

0.001

0.01

0.1

t, RECTANGULAR PULSE DURATION (s)

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

SINGLE PULSE

0.05

0.5

0.02

0.1

0.01

0.2

FSYA254D, FSYA254R

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