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FSYA450D 数据表(PDF) 2 Page - Intersil Corporation

部件名 FSYA450D
功能描述  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
PDF  8 Pages
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

FSYA450D 数据表(HTML) 2 Page - Intersil Corporation

  FSYA450D Datasheet HTML 1Page - Intersil Corporation FSYA450D Datasheet HTML 2Page - Intersil Corporation FSYA450D Datasheet HTML 3Page - Intersil Corporation FSYA450D Datasheet HTML 4Page - Intersil Corporation FSYA450D Datasheet HTML 5Page - Intersil Corporation FSYA450D Datasheet HTML 6Page - Intersil Corporation FSYA450D Datasheet HTML 7Page - Intersil Corporation FSYA450D Datasheet HTML 8Page - Intersil Corporation  
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4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSYA450D, FSYA450R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
500
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
500
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
11
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
7A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
33
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
150
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
60
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.20
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
33
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
11
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
33
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
500
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 400V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 11A
-
-
6.12
V
Drain to Source On Resistance
rDS(ON)12
ID = 7A,
VGS = 12V
TC = 25
oC
-
0.440
0.530
Ω
TC = 125
oC
-
-
1.02
Ω
Turn-On Delay Time
td(ON)
VDD = 250V, ID = 11A,
RL = 22.7Ω, VGS = 12V,
RGS = 2.35Ω
-
-
40
ns
Rise Time
tr
-
-
20
ns
Turn-Off Delay Time
td(OFF)
-
-
85
ns
Fall Time
tf
-
-
15
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 250V,
ID = 11A
-
-
200
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
110
130
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
7.9
nC
Gate Charge Source
Qgs
-22
26
nC
Gate Charge Drain
Qgd
-54
62
nC
Plateau Voltage
V(PLATEAU) ID = 11A, VDS = 15V
-
7
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
3050
-
pF
Output Capacitance
COSS
-
400
-
pF
Reverse Transfer Capacitance
CRSS
-80-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.83
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 11A
0.6
-
1.8
V
Reverse Recovery Time
trr
ISD = 11A, dISD/dt = 100A/µs
-
-
980
ns
FSYA450D, FSYA450R



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