2SD1758-R datasheet(2/2 Pages) KEXIN

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SMD Type

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Transistors

NPN Transistors

2SD1758

■

Typical Characterisitics

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.1 Grounded emitter propagation

characteristics

1000

2000

200

500

100

0.2

0.6

0.4

0.8 1.0 1.2 1.4 1.6 1.8

Ta=25°C

VCE=

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.2 Grounded emitter output

characteristics

0.1

0.2

0.3

0.4

0.5

0.4

0.8

1.2

1.6

2.0

Ta=25°C

IB=0A

3.0mA

2.7mA

2.4mA

2.1mA

1.8mA

1.5mA

1.2mA

0.9mA

0.6mA

0.3mA

COLLECTOR CURRENT : IC

(mA)

Fig.3 DC current gain vs. collector

current

500

10 20

50 100 200 500 1A 2A

200

100

Ta=25°C

VCE=3V

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation

voltage vs. collector current

500

200

100

5 10 20

50 100 200 500 1A 2A

Ta=25°C

IC/IB=50

COLLECTOR CURRENT : IC (mA)

Fig.5 Collector-emitter saturation

voltage vs. collector current

0.2

0.5

0.1

10 20

50 100 200 500 1A 2A

Ta=25°C

IC/IB=10

EMITTER CURRENT : IE (mA)

Fig.6 Transition frequency vs. emitter

current

-2

−1

200

−5 −10 −20 −50 −100−200 −500 −1A

500

1000

100

Ta=25°C

VCE=

0.5

200

500

1000

100

Ta=25°C

f=1MHz

IE=

IC=

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE

: VEB (V)

Fig.7 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Cib

Cob

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.8 Safe operating area

0.2

0.5

0.1

0.05

0.2

0.5 1

10 20

0.01

0.02

PW=100ms

TC=25°C

Single

nonrepetitive

pulse

2SD1758-R 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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