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2SD1898-R 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SD1898-R
功能描述  NPN Transistors
PDF  2 Pages
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1898-R 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1898-R Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SD1898-R Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
2
Transistors
NPN Transistors
2SD1898
■
Typical Characterisitics
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
10
1
Ta=25 °
C
V CE =5V
2
4
0
1
8
0
6
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.2 Grounded emitter output
characteristics
1.0
0
0.8
0.6
0.4
0.2
6mA
5mA
4mA
3mA
2mA
1mA
IB =0mA
Ta=25 °
C
0
100
1000
100
0
0
0
1
0
1
0
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs.
collector current
Ta=25 °
C
V CE =3V
1V
0.01
0.1
1.0
2.0
0.2
0.02
0.05
0.5
100
0
0
0
1
0
1
0
COLLECTOR CURRENT : IC (
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
IC
/I B=20/1
Ta=25 °
C
10/1
1
2
5 10 20 50 100 200 5001000
EMITTER CURRENT : −IE
(mA)
Fig.5 Gain bandwidth product vs.
emitter current
500
200
100
50
20
10
5
2
Ta=25 °
C
V CE =5V
0.1 0.2 0.5 1
2
5 10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (
V)
EMITTER TO BASE VOLTAGE : VEB (
V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
10
1
Ta=25°
C
f=1MHz
IE =0A
Ic=0A
Ic Max (Pulse)
Ta=25 °
C
Single
non-repetitive
pulse
DC
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
0.1 0.2 0.5 1 2
5 10 20 50100
500
200
100
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Fig.7 Safe operating area
(2SD1898)



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