2SA1417-R datasheet(1/3 Pages) KEXIN

部件名	2SA1417-R

功能描述	PNP Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1 / 3 page

SMD Type

Transistors

www.kexin.com.cn

1

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Electrical Characteristics Ta = 25

PNP Transistors

2SA1417

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-120

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， RBE=∞

-100

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -100 V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-1A, IB=- 100mA

-0.22 -0.6

Base - emitter saturation voltage

VBE(sat) IC=-1A, IB=- 100mA

-0.85 -1.2

DC current gain

hFE

VCE= -5V, IC= -100mA

100

400

Turn-on time

ton

80

Storage time

ts

750

Fall time

tf

40

Output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

25

pF

Transition frequency

fT

VCE= -10V, IE= -100mA

120

MHz

See Test Circuit.

V

ns

uA

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-120

Collector - Emitter Voltage

VCEO

-100

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-2

Collector Current - Pulsed

ICP

-3

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Classification of hfe

●

Complementary to 2SC3647

Type

2SA1417-R

2SA1417-S

2SA1417-T

Range

100-200

140-280

200-400

Marking

ACR*

ACS*

ACT*

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