2SB1121-R datasheet(1/3 Pages) KEXIN

部件名	2SB1121-R

功能描述	PNP Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1121

■

Features

●

Low collector-to-emitter saturation voltage.

●

Large current capacity and wide ASO.

●

Fast switching speed.

●

Complementary to 2SD1621

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-30

Collector - Emitter Voltage

VCEO

-25

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-2

Collector Current - Pulse

ICP

-5

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-30

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， RBE=∞

-25

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -20 V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-1.5A, IB=-75mA

-0.35 -0.6

Base - emitter saturation voltage

VBE(sat) IC=-1.5A, IB=-75mA

-0.85 -1.2

hFE(1)

VCE= -2V, IC= -100mA

100

560

hFE(2)

VCE=- 2V, IC= -1.5A

65

Turn-on time

ton

60

Storage time

tstg

350

Turn -off time

toff

25

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

32

pF

Transition frequency

fT

VCE= -10V, IC= -50mA

150

MHz

DC current gain

V

uA

See specified Test Circuit.

ns

■

Classification of hfe(1)

Type

2SB1121-R

2SB1121-S

2SB1121-T

2SB1121-U

Range

100-200

140-280

200-400

280-560

Marking

BDR

BDS

BDT

BDU

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