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2SC3646-R 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SC3646-R
功能描述  NPN Transistors
PDF  3 Pages
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3646-R 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3646-R Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SC3646-R Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd 2SC3646-R Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SC3646
Features
High breakdown voltage and large current capacity.
Fast switching speed.
Complementary to 2SA1416
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
120
Collector - Emitter Voltage
VCEO
100
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
1
Peak Collector Current
ICM
2
Collector Power Dissipation
PC
500
mW
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
120
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA,RBE= ∞
100
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
6
Collector-base cut-off current
ICBO
VCB= 100 V , IE= 0
0.1
Emitter cut-off current
IEBO
VEB= 4V , IC=0
0.1
Collector-emitter saturation voltage
VCE(sat) IC=400 mA, IB=40mA
0.1
0.4
Base - emitter saturation voltage
VBE(sat) IC=400 mA, IB=40mA
0.85
1.2
DC current gain
hFE
VCE= 5V, IC= 100mA
100
400
Turn-ON Time
ton
80
Storage Time
tstg
850
Fall Time
tf
50
Collector output capacitance
Cob
VCB= 10V,f=1MHz
8.5
pF
Transition frequency
fT
VCE= 10V, IC= 100mA
120
MHz
V
uA
V
See sepcified Test Circuit.
ns
Classification of hfe
Type
2SC3646-R
2SC3646-R
2SC3646-T
Range
100-200
140-280
200-400
Marking
CBR
CBS
CBT


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