2SC3647-R datasheet(1/3 Pages) KEXIN

部件名	2SC3647-R

功能描述	NPN Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

NPN Transistors

2SC3647

■

Features

●

High breakdown voltage and large current capacity.

●

Complementary to 2SA1417

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

120

Collector - Emitter Voltage

VCEO

100

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

2

Peak Collector Current

ICM

3

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

120

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，RBE= ∞

100

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 100 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=1A, IB=100mA

0.13

0.4

Base - emitter saturation voltage

VBE(sat) IC=1A, IB=100mA

0.85

1.2

DC current gain

hFE

VCE= 5V, IC= 100mA

100

400

Turn-ON Time

ton

80

Storage Time

tstg

1000

Fall Time

tf

50

Collector output capacitance

Cob

VCB= 10V,f=1MHz

16

pF

Transition frequency

fT

VCE= 10V, IC= 100mA

120

MHz

V

uA

V

See sepcified Test Circuit.

ns

■

Classification of hfe

Type

2SC3647-R

2SC3647-T

Range

100-200

140-280

200-400

Marking

CCR

CCS

CCT

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