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2SD882-R 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD882-R 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() DIP Type Transistors 1 2SD882 www.kexin.com.cn Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V e g a tl o V e s a B o t r o t c e ll o C CBO 40 V V e g a tl o V r e tt i m E o t r o t c e ll o C CEO 30 V V e g a tl o V e s a B o t r e tt i m E EBO 6 V Collector Current to Continuous IC 3 A P n o it a p i s s i D r o t c e ll o C c 1 T e r u t a r e p m e T n o it c n u J J 150 T e r u t a r e p m e T e g a r o t S stg -55 to 150 Electrical Characteristics Ta = 25 ti n U x a M p y T n i M s n o ti i d n o c t s e T l o b m y S r e t e m a r a P Collector-base breakdown voltage VCBO Ic=100uA ,IE V 0 4 0 = Collector-emitter breakdown voltage VCEO IC= 10 mA , IB V 0 3 0 = Emitter-base breakdown voltage VEBO IE= 100 uA ,IC V 6 0 = I t n e rr u c ff o -t u c r o t c e ll o C CBO VCB=40 V , IE A u 1 0 = I t n e rr u c ff o -t u c r o t c e ll o C CEO VCE=30 V , IB A u 0 1 0 = I t n e rr u c ff o -t u c r e tt i m E EBO VEB=6V , IC A u 1 0 = VCE= 2V, IC 0 0 4 0 6 A 1 = VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC=2A, IB V 5 . 0 A 2 . 0 = Base-emitter saturation voltage VBE(sat) IC=2A, IB V 5 . 1 A 2 . 0 = f y c n e u q e rf n o it i s n a r T T VCE=5 V, IC=0.1mA,f = 10MHz 50 MHz h n i a g t n e rr u c C D FE ■ Classification of hfe(1) NPN Transistors Type 2SD882-R 2SD882-Q 2SD882-P 2SD882-E Range 60-120 100-200 160-320 200-400 W 3.25± 0.20 8.00± 0.30 ø3.20± 0.10 0.75± 0.10 #1 0.75± 0.10 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 1.60± 0.10 1.75± 0.20 (0.50) (1.00) 0.50 +0.10 –0.05 TO-126 3. Emitter 1. Base 2. Collector Unit:mm 1 2 3 |
类似零件编号 - 2SD882-R |
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类似说明 - 2SD882-R |
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