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2SD2457-R 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SD2457-R
功能描述  NPN Transistors
PDF  2 Pages
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD2457-R 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD2457-R Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SD2457-R Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SD2457
Features
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Complementary to 2SB1599
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
50
Collector - Emitter Voltage
VCEO
40
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
1.5
Collector Current - Pulse
ICP
3
Collector Power Dissipation
PC
1
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 1 mA, IE= 0
50
Collector- emitter breakdown voltage
VCEO
Ic= 2 mA, IB= 0
40
Emitter - base breakdown voltage
VEBO
IE= 1 mA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 50 V , IE= 0
1
Collector-emitter cut-off current
ICEO
VCE= 40 V , IB= 0
10
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
Collector-emitter saturation voltage
VCE(sat) IC=1.5 A, IB=150mA
1
Base - emitter saturation voltage
VBE(sat) IC=2 A, IB=200mA
1.5
DC current gain
hFE
VCE= 5V, IC= 1 A
80
220
Collector output capacitance
Cob
VCB=20V, IE=0, f=1MHz
45
pF
Transition frequency
fT
VCE=5V,IE=-500mA,f=200MHz
150
MHz
V
uA
V
Classification of hfe
Type
2SD2457-Q
2SD2457-R
Range
80-160
120-220
Marking
1YQ
1YR


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