Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

High voltage transistor

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

50

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

150

mA

Collector Power Dissipation

0.4

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

Thermal Resistance, junction to Ambient

410

/mW

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -100μA, IE=0

-300

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA, IB=0

-300

V

Emitter-base breakdown voltage

VEBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

ICB

O

VCB=-200V, IE=0

-0.25

μA

Emitter cut-off current

IEB

O

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE(1)

VCE= -10V, IC= -1mA

60

hFE(2)

VCE= -10V, IC=-10mA

100

200

hFE(3)

VCE= -10V, IC=-30mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-20mA, IB= -2mA

-0.2

V

Base-emitter saturation voltage

VBE(sat)

IC= -20mA, IB= -2mA

-0.9

V

Transition frequency

fT

VCE=-20V, IC= -10mA

f=30MHz

50

MHz

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MMBTA92

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/