2SA1415-R datasheet(1/3 Pages) KEXIN

部件名	2SA1415-R

功能描述	PNP Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1 / 3 page

SMD Type

Transistors

www.kexin.com.cn

1

Features

Adoption of FBET Process

High Breakdown Voltage (VCEO = 160V)

Excellent Linearlity of hFE and Small Cob

Fast Switching Speed

Absolute Maximum Ratings Ta = 25

Electrical Characteristics Ta = 25

PNP Transistors

2SA1415

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-180

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-160

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -80 V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-50mA, IB=- 5mA

-0.14 -0.4

Base - emitter saturation voltage

VBE(sat) IC=-50mA, IB=- 5mA

-1.2

DC current gain

hFE

VCE= -5V, IC= -10mA

100

400

Turn-on time

ton

0.1

Storage time

ts

0.15

Fall time

tf

0.1

Output capacitance

Cob

VCB= -10V, IE= 0,f =1MHz

4

pF

Transition frequency

fT

VCE= -10V, IE= -10mA

150

MHz

See Test Circuit.

V

us

uA

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-180

Collector - Emitter Voltage

VCEO

-160

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-140

Collector Current - Pulsed

ICP

-200

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

mA

■

Classification of hfe

●

Complementary to 2SC3645

Type

2SA1415-R

2SA1415-S

2SA1415-T

Range

100-200

140-280

200-400

Marking

AAR*

AAS*

AAT*

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