2SB1220-R datasheet(1/2 Pages) KEXIN

部件名	2SB1220-R

功能描述	PNP Transistors

PDF	2 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1220

■

Features

●

High collector to emitter voltage VCEO.

●

Low noise voltage NV.

●

Complementary to 2SD1821

1 Base

2 Emitter

3 Collector

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-150

Collector - Emitter Voltage

VCEO

-150

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-50

Collector Current - Pulse

ICP

-100

Collector Power Dissipation

PC

150

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

mA

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-150

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-150

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -100V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-30 mA, IB=-3mA

-1

Base - emitter saturation voltage

VBE(sat) IC=-30 mA, IB=-3mA

-1.2

DC current gain

hFE

VCE= -5V, IC= -10 mA

130

450

Noise voltage

NV

VCE = –10V, IC = –1mA, GV= 80dB,

Rg = 100kΩ , Function = FLAT

150

mV

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

4

pF

Transition frequency

fT

VCE= -10V, IE= 10 mA,f=200MHz

200

MHz

V

uA

■

Classification of hfe

Type

2SB1220-R

2SB1220-S

2SB1220-T

Range

130-220

185-330

260-450

Marking

IR

IS

IT

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