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2SA1815-JS3 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SA1815-JS3
功能描述  PNP Transistors
PDF  3 Pages
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1815-JS3 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1815
Features
High power gain : PG=25dB (f=100MHz).
High cutoff frequency ; fT=750MHz typ.
Low collector-to-emitter saturation voltage.
Complementary pair with the 2SC4432.
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-15
Collector - Emitter Voltage
VCEO
-12
Emitter - Base Voltage
VEBO
-3
Collector Current - Continuous
IC
-50
mA
Collector Power Dissipation
PC
250
mW
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Classification of hfe
Type
2SA1815-JS3
2SA1815-JS4 2SA1815-JS5
Range
60-120
90-180
135-270
Marking
JS3
JS4
JS5
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-15
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-12
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-3
Collector-base cut-off current
ICBO
VCB= -12 V , IE=0
-100
Emitter cut-off current
IEBO
VEB= -2V , IC=0
-100
Collector-emitter saturation voltage
VCE(sat) IC=-10mA, IB=-1mA
-0.1
-0.3
Base - emitter saturation voltage
VBE(sat) IC=-10mA, IB=-1mA
-1.2
DC current gain
hFE
VCE= -10V, IC= -5mA
60
270
Power Gain
PG
VCE= -10V, IC= -10mA,f=100MHz
25
dB
Collector output capacitance
Cob
VCB= -10V, IE= 0,f=1MHz
1.2
1.6
Reverse Transfer Capacitance
Cre
VCB= -10V, IE= 0,f=1MHz
0.9
Transition frequency
fT
VCE= -10V, IC= -5mA
750
MHz
V
V
nA
pF
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
1. Base
2. Emitter
3. Collector
0.15 +0.02
-0.02


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