2SA1815-JS4 datasheet(1/3 Pages) KEXIN

部件名	2SA1815-JS4

功能描述	PNP Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SA1815

■

Features

●

High power gain : PG=25dB (f=100MHz).

●

High cutoff frequency ; fT=750MHz typ.

●

Low collector-to-emitter saturation voltage.

●

Complementary pair with the 2SC4432.

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-15

Collector - Emitter Voltage

VCEO

-12

Emitter - Base Voltage

VEBO

-3

Collector Current - Continuous

IC

-50

mA

Collector Power Dissipation

PC

250

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

■

Classification of hfe

Type

2SA1815-JS3

2SA1815-JS4 2SA1815-JS5

Range

60-120

90-180

135-270

Marking

JS3

JS4

JS5

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-15

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-12

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-3

Collector-base cut-off current

ICBO

VCB= -12 V , IE=0

-100

Emitter cut-off current

IEBO

VEB= -2V , IC=0

-100

Collector-emitter saturation voltage

VCE(sat) IC=-10mA, IB=-1mA

-0.1

-0.3

Base - emitter saturation voltage

VBE(sat) IC=-10mA, IB=-1mA

-1.2

DC current gain

hFE

VCE= -10V, IC= -5mA

60

270

Power Gain

PG

VCE= -10V, IC= -10mA,f=100MHz

25

dB

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

1.2

1.6

Reverse Transfer Capacitance

Cre

VCB= -10V, IE= 0,f=1MHz

0.9

Transition frequency

fT

VCE= -10V, IC= -5mA

750

MHz

V

nA

pF

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

1. Base

2. Emitter

3. Collector

0.15 +0.02

-0.02

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