IRLML0100 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

N-Channel MOSFET

IRLML0100 (KRLML0100)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

100

VDS=100V, VGS=0V

VDS=100V, VGS=0V, TJ=125℃

250

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±16V

100 nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

2.5

VGS=4.5V, ID=1.3A

190

235

VGS=10V, ID=1.6A

178

220

Forward Transconductance

gFS

VDS=50V, ID=1.6A

5.7

Input Capacitance

Ciss

290

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

1.3

Total Gate Charge

2.5

Gate Source Charge

Qgs

0.5

Gate Drain Charge

Qgd

1.2

Turn-On DelayTime

td(on)

2.2

Turn-On Rise Time

2.1

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

3.6

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Maximum Body-Diode Continuous Current

1.1

Pulsed Source Current

ISM

(Note.2)

Diode Forward Voltage

VSD

IS=1.1A,VGS=0V,TJ = 25℃ (Note.1)

1.3

Zero Gate Voltage Drain Current

IDSS

mΩ

VGS=4.5V, VDS=50V, ID=1A,RGEN=6.8Ω

RDS(On)

Static Drain-Source On-Resistance (Note.1)

VR=50V,IF= 1.1A, dI/dt= 100A/μs ,

TJ = 25℃ (Note.1)

VGS=0V, VDS=25V, f=1MHz

VGS=4.5V, VDS=50V, ID=1.6A

Note.1: Pulse width ≤ 400μs; duty cycle ≤ 2%.

Note.2:Repetitive rating; pulse width limited by max. junction temperature.

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Marking

1K**

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