4-293

File Number

2324.4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFD310

0.4A, 400V, 3.600 Ohm, N-Channel

Power MOSFET

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

Formerly developmental type TA17444.

Features

• 0.4A, 400V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

HEXDIP

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD310

HEXDIP

IRFD310

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

GATE

DRAIN

Data Sheet

July 1999