IRFP450 datasheet(2/7 Pages) INTERSIL

2 / 7 page

4-354

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFP450

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

500

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

500

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

8.8

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

180

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.44

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

860

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 10)

500

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

On Resistance (Note 2)

rDS(ON)

ID = 7.9A, VGS = 10V (Figures 8, 9)

0.3

0.4

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 50V, ID = 7.9A (Figure 12)

9.3

13.8

Turn-On Delay Time

td(ON)

VDD = 250V, ID ≈ 14A, VGS = 10V, RGS = 6.1Ω,

RL = 17.4Ω MOSFET Switching Times are

Essentially Independent of Operating Temperature

-16

Rise Time

-45

Turn-Off Delay Time

td(OFF)

100

Fall Time

-41

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID ≈ 14A, VDS = 0.8 x Rated BVDSS

IG(REF) = 1.5mA (Figure 14) Gate Charge is

Essentially Independent of OperatingTemperature

130

Gate to Source Charge

Qgs

-12-

Gate to Drain “Miller” Charge

Qgd

-42-

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

2000

Output Capacitance

COSS

400

Reverse Transfer Capacitance

CRSS

100

Internal Drain Inductance

Measured from the Contact

Screw on Header Closer to

Source and Gate Pins to

Center of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

5.0

Internal Source Inductance

Measured from the Source

Lead, 6.0mm (0.25in) from

Header to Source Bonding

Pad

12.5

Thermal Resistance, Junction to Case

RθJC

0.70

oC/W

Thermal Resistance, Junction to Ambient

RθJA

Free Air Operation

oC/W

IRFP450

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