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BAS21T 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BAS21T 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() BAS21T 0.4A , 250V Plastic-Encapsulated Diode Elektronische Bauelemente 21-Jul-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Reverse Breakdown Voltage V(BR)R 250 - - V IR=100µA Forward Voltage VF1 - - 1 V IF=100mA VF2 - - 1.25 IF=200mA Reverse Voltage Leakage Current IR - - 0.1 µA VR=200V Total Capacitance CT - - 5 pF VR=0 , f=1MHz Reverse Recovery Time TRR - - 50 nS IF=IR=30mA, IRR=0.1 x IR, RL=100 RATINGS AND CHARACTERISTIC CURVES |
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