Any changing of specification will not be informed individual

BC857S

PNP Silicon

Multi-Chip Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

0

50

100

150

200

250

0

100

200

T , AMBIENT TEMPERATURE (

°C)

A

Fig.1,PowerDerating Curve

(see Note 1)

1

10

100

1000

10

100

1

I , COLLECTOR CURRENT (mA)

C

Fig. 2, DC Current Gain vs Collector Current

V

= -5V

CE

T = 25

°C

A

T = -50

°C

A

T = 150

°C

A

0

0.1

0.2

0.3

0.4

0.5

0.1

110

100

1000

I , COLLECTOR CURRENT (mA)

C

Fig. 3, Collector Saturation Voltage vs Collector Current

I / I = 20

CB

T = 150

°C

A

T = 25

°C

A

T = -50

°C

A

10

100

1000

1

10

100

I , COLLECTOR CURRENT (mA)

C

Fig. 4, Gain Bandwidth Product vs Collector Current

V

= -5V

CE

T = 25

°C

A

01-Jan-2006 Rev. B

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