BAS511 datasheet(1/2 Pages) KEXIN

部件名	BAS511

功能描述	Switching Diodes

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Diodes

Switching Diodes

BAS511 (KAS511)

■

Features

●

Silicon epitaxial planar diode

●

High switching speed: trr≤4ns

●

Low forward drop voltage and low leakage current

●

“Green” device and RoHS compliant device

●

Available in full lead (Pb)-free device

Unit: mm

SOD-323

1.7 +0.1

-0.1

2.6 +0.1

-0.1

0.475

0.375

0.85 +0.05

-0.05

1.0max

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Repetitive Peak Reverse Voltage

VRM

85

Continuous Reverse Voltage

VR

80

Average Forward Rectified Current

IO

100

Forward Current

IF

100

Peak Forward Surge Current

IFM

300

Non-repetitive peak forward surge current(t=10ms)

IFSM

2

A

Power Dissipation

Pd

150

mW

Thermal Resistance Junction to Ambient

RθJA

830

℃

/W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

℃

V

mA

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Reverse breakdown voltage

VR

IR= 100 uA

85

VF1

IF= 1 mA

0.6

VF2

IF= 10 mA

0.7

VF3

IF= 100 mA

0.9

1.2

Reverse voltage leakage current

IR1

VR= 80 V

(Note.2)

0.5

uA

Junction capacitance

Cj

VR= 0 V, f= 1 MHz

4

pF

Reverse recovery time

trr

IF=10mA

4

ns

Forward voltage

(Note.1)

V

Note.1: Pulse test: tP≤380us, Duty cycle≤2%

Note.2: Pulse test: tP≤5ms, Duty cycle≤2%

■

Marking

S1*

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