RFD10P03LSM datasheet(2/8 Pages) INTERSIL

2 / 8 page

7-4

Absolute Maximum Ratings

TC = 25

oC Unless Otherwise Speciﬁe

RFD10P03L, RFD10P03LSM,

RFP10P03L

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

-30

Drain to Gate Voltage (RGS = 20KΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-30

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

See Figure 5

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.43

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

(0.063in (1.6mm) from case for 10s)

300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

-30

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 12)

-1

-2

Zero Gate Voltage Drain Current

IDSS

VDS = -30V,

TC = 25

oC-

-1

µA

VGS = 0V

TC = 150

-50

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

±100

Drain to Source On Resistance

(Note 1)

rDS(ON)

ID = 10A, VGS = -5V (Figures 9, 10)

0.200

Ω

ID = 10A, VGS = -4.5V (Figures 9, 10)

0.220

Ω

Turn-On Time

tON

VDD = 15V, ID ≅ 10A, RL = 1.5Ω,

RGS = 5Ω, VGS = -5V

(Figure 13)

100

Turn-On Delay Time

td(ON)

-15-

Rise Time

-50-

Turn-Off Delay Time

td(OFF)

-35-

Fall Time

-20-

Turn-Off Time

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0 to -10V

VDD = -24V, ID ≅ 10A,

RL = 2.4Ω

Ig(REF) = -0.25mA

(Figure 14)

-25

Gate Charge at -5V

Qg(-5)

VGS = 0 to -5V

Threshold Gate Charge

Qg(TH)

VGS = 0 to -1V

1.2

1.5

Input Capacitance

CISS

VDS = -25V, VGS = 0V, f = 1MHz

(Figure 15)

1035

Output Capacitance

COSS

340

Reverse Transfer Capacitance

CRSS

-35-

Thermal Resistance, Junction to Case

RθJC

2.30

oC/W

Thermal Resistance, Junction to Ambient

RθJA

RFD10P03L, RFD10P03LSM

100

oC/W

RFP10P03L

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Forward Voltage

VSD

ISD = -10A

-1.5

Reverse Recovery Time

trr

ISD = -10A, dISD/dt = -100A/µs-

NOTE:

2. Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%.

RFD10P03L, RFD10P03LSM, RFP10P03L

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