RFF60P06 datasheet(2/8 Pages) INTERSIL

2 / 8 page

4-182

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFF60P06

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

-60

Drain to Gate Voltage (RGS = 20k

Ω) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-60

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

25 (Note 5)

Refer to Peak Current Curve

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125

1.0

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

-60

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

-2.0

-3.0

-4.5

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS,VGS = 0V

-25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

-250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, TC = 125

oC-

±100

µA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 25A, VGS = -10V, (Figure 9)

0.030

Ω

Turn-On Time

tON

VDD = -30V, ID = 25A, RL = 1.2Ω, VGS = -10V

RG = 2.35Ω

(Figures 13, 16, 17)

195

Turn-On Delay Time

td(ON)

-25

Rise Time

125

Turn-Off Delay Time

td(OFF)

200

Fall Time

-30

Turn-Off Time

tOFF

275

Total Gate Charge

Qg(TOT)

VGS = 0 to -20V

VDD = -30V, ID = 25A,

RL = 1.2Ω

IG(REF) = -4.2mA

(Figures 18, 19)

450

Gate Charge at -10V

Qg(-10)

VGS = 0 to -10V

225

Threshold Gate Charge

Qg(TH)

VGS = 0 to -2V

Input Capacitance

CISS

VDS = -25V, VGS = 0V

f = 1MHz

7200

Output Capacitance

COSS

1800

Reverse Transfer Capacitance

CRSS

400

Thermal Resistance Junction to Case

RθJC

1.0

oC/W

Thermal Resistance Junction to Ambient

RθJA

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = -25A

-1.1

-1.5

Diode Reverse Recovery Time

trr

ISD = -25A, dISD/dt = -100A/µs

130

200

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

4. Current is limited by package capability.

RFF60P06

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