RFP8P06LE datasheet(2/8 Pages) INTERSIL

2 / 8 page

7-12

Absolute Maximum Ratings

TC = 25

oC Unless Otherwise Speciﬁed

RFD8P06LE, RFD8P06LESM,

RFP8P06LE

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

-60

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-60

Continuous Drain Current

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

-8

-6.3

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

See Figure 5

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±10

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

See Figure 6

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(0.063in (1.6mm) from case for 10s)

300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

-60

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 12)

-1

-2

Zero Gate Voltage Drain Current

IDSS

VDS =- 60V, VGS = 0V

TJ = 25

oC-

-1

µA

TJ = 150

-50

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

±10

µA

On Resistance (Note 1)

rDS(ON)

ID = 8A, VGS = -5V (Figure 9, 10)

0.300

Ω

ID = 8A, VGS = -4.5V (Figure 9, 10)

0.330

Ω

Turn-On Time

tON

VDD = -30V, ID ≅ 8A, RGS = 9.1Ω, RL = 3.75Ω

(Figure 13)

Turn-On Delay Time

td(ON)

-10-

Rise Time

-50-

Turn-Off Delay Time

td(OFF)

-30-

Fall Time

-20-

Turn-Off Time

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0 to -10V

VDD = -48V, ID ≅ 8A,

RL = 6Ω

Ig(REF) = -0.2mA

(Figure 14)

-25

Gate Charge at -5V

Qg(-5)

VGS = 0 to -5V

Threshold Gate Charge

Qg(TH)

VGS = 0 to -1V

1.2

1.5

Input Capacitance

CISS

VDS =- 25V, VGS = 0V, f = 1MHz

(Figure 15)

675

Output Capacitance

COSS

175

Reverse Transfer Capacitance

CRSS

-50-

Thermal Resistance Junction to Case

RθJC

3.125

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251AA, TO-252AA

100

oC/W

TO-220AB

oC/W

Source to Drain Diode Speciﬁcations TC = 25oC Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 1)

VSD

TJ = 25

oC, I

SD =- 8A, VGS = 0V

-1.5

Reverse Recovery Time

trr

TJ = 25

oC, I

SD =- 8A, dISD/dt = 100A/µs

125

NOTE:

2. Pulse Test: Pulse width

≤300µs, Duty Cycle ≤2%.

RFD8P06LE, RFD8P06LESM, RFP8P06LE

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