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BCX53 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 BCX53
功能描述  PNP Transistors
PDF  2 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

BCX53 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  BCX53_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH BCX53_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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BCX53
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Elektronische Bauelemente
1.BASE
2.COLLECTOR
3.EMITTER
1
2
3
Features
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2005 Rev. B
Page 1 of 2
4.4~4.6
1.4~1.8
0.35~0.44
1.4~1.6
0.32~0.52
0.36~0.56
1.5Ref.
2.9~3.1
Dimensision in Millimeter
SOT-89
C
o
W (Tamb=25 )
A
V
Power dissipation
PCM:
0.5
Collector current
ICM:
-1.0
Collector-base voltage
V(BR)CBO:
-100.0
Operating and storage junction temperature range
TJ,Tstg: 150, -65 ~ 150 C
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
hFE(1)
VCE=-2V, IC=- 5 mA
- 150 mA
63
DC current gain
hFE(3)
VCE=-2V, IC= -500mA
40
hFE(2)
VCE=-2V, IC=
63
250
Base-emitter
voltage
VBE
IC= -500 mA, VCE=-2V
-1
V
MIN
MAX
UNIT
C
o
o
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA , IE=0
-100
V
IB=0
-80
-5
Collector-emitter breakdown voltage
V(BR)CEO
IC=- 1 mA ,
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100 µA, IC=0
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
µA
Collector-emitter saturation voltage
VCE(sat)
IC=-500 mA, IB=- 50mA
-0.5
V
Transition frequency
f T
VCE= -5V, IC=-10mA
f = 100MHz
50
MHz
DEVICE MARKING
BCX53=AH
BCX53-10=AK
BCX53-16=AL


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