1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

RFH12N35, RFH12N40

12A, 350V and 400V, 0.380 Ohm,

N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17434.

Features

• 12A, 350V and 400V

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-218AC

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFH12N35

TO-218AC

RFH12N35

RFH12N40

TO-218AC

RFH12N40

NOTE: When ordering, use the entire part number.

G

D

S

DRAIN

SOURCE

DRAIN

GATE

October 1998

File Number

1630.2

Data Sheet