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D882S 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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D882S 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente 08-Oct-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Collector Base Emitter RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Dissipation CLASSIFICATION OF hFE Rank R 0 Y GR Range 60-120 100-200 160-320 200-400 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 3 A Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=100 μA, IE = 0 A Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10 mA, IB = 0 A Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=100 μA, IC = 0A Collector Cut-Off Current ICBO - - 1 μA VCB=40 V, IE = 0 A Collector Cut-Off Current ICEO - - 10 μA VCE=30 V, IB = 0 A Emitter Cut-Off Current IEBO - - 1 μA VEB=6 V, IC =0 A DC Current Gain hFE 60 - 400 VCE=2 V, IC=1 A Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=2 A, IB=0.2 A Base to Emitter Saturation Voltage VBE(sat) - - 1.5 V IC=2 A, IB=0.2 A Transition Frequency fT 50 - - MHz VCE = 5 V, IC = 0.1 A, f=10 MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J |
类似零件编号 - D882S |
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类似说明 - D882S |
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