ACE2302C datasheet(1/6 Pages) ACE

部件名	ACE2302C

功能描述	N-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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ACE2302C

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as load switch or in PWM

applications.

Features

 20V/5.1A

 R

DS(ON)

=28

mΩ (typ.) @ V

GS=4.5V

 R

DS(ON)

=38

mΩ (typ.) @ V

GS=2.5V

 R

DS(ON)

=60

mΩ (typ.) @ V

GS=1.8V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25℃

ID

5.1

A

TA=70℃

4

Drain Current (Pulsed)

IDM

20

A

Power Dissipation

TA=25℃

PD

1

W

Operating temperature / storage temperature TJ/TSTG -55~150 ℃

Packaging Type

SOT-23-3

3

1

2

Ordering information

ACE2302C XX + H

SOT-23-3

Description

Function

1

G

Gate

2

S

Source

3

D

Drain

BM : SOT-23-3

Pb - free

Halogen - free

类似零件编号 - ACE2302C

制造商	部件名	数据表	功能描述
ACE Technology Co., LTD...	ACE2302	205Kb / 7P	N-Channel Enhancement Mode MOSFET VER 1.2
	ACE2302	428Kb / 7P	N-Channel Enhancement Mode MOSFET VER 1.3
	ACE2302B	649Kb / 6P	N-Channel Enhancement Mode MOSFET VER 1.2
VBsemi Electronics Co.,...	ACE2302BBM+H	2Mb / 9P	N-Channel 20 V (D-S) MOSFET
VBsemi Electronics Co.,...	ACE2302BBM-H	2Mb / 9P	N-Channel 20 V (D-S) MOSFET

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