ACE5208 datasheet(2/6 Pages) ACE

2 / 6 page

ACE5208

P-Channel Power MOSFET

VER 1.1

Ordering information

ACE5208 XX + H

Electrical Characteristics (TA=25 OC unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-12

Zero Gate Voltage Drain Current

IDSS

VDS=-12V, VGS=0V

-1

Gate-Body Leakage Current

IGSS

VGS=±8V, VDS=0V

±120

On characteristics (note 5)

Drain-Source On-state Resistance

RDS(ON)

VGS=-4.5V, ID=-6.7A

mΩ

VGS=-2.5V, ID=-6.2A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.4

-0.7

-1

Forward Transconductance

gFS

VDS=-5V, ID=-2.8A

Dynamic characteristics (note 6)

Input Capacitance

Ciss

VDS=-6V, VGS=0V

f=1 MHz

1280

Output Capacitance

Coss

250

Reverse Transfer Capacitance

Crss

240

Total Gate Charge

VDS=-6V, VGS=-8V,

ID=-10A

VDS=-6V, VGS=-4.5V,

ID=-10A

6.5

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

3.5

Drain-source diode characteristics

Diode Forward Current (note 5)

1.2

-1.4

Diode Forward Voltage (note 4)

VSD

ISD=-1.25A,VGS=0V

1.0

-1.2

LN : DFNWB2*2-6L-J

Pb - free

Halogen - free

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