Silicon Transistor

NE97833 / 2SA1978

PNP EPITAXIAL SILICON TRANSISTOR

MICROWAVE AMPLIFIER

Document No. P11028EJ1V0DS00 (1st edition)

Date Published April 1996 P

DATA SHEET

FEATURES

PACKAGE DIMENSIONS

•

(in milimeters)

•

•

High speed switching characteristics

•

Equivalent NPN transistor is the

NE02133 / 2SC2351.

•

Alternative of the 2SA1424.

°°°C)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

−20

V

Collector to Emitter Voltage

−12

V

Emitter to Base Voltage

−3.0

V

Collector Current

−50

mA

Total Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

−10 V

−0.1

µA

Emitter Cutoff Current

−2 V

−0.1

µA

DC Current Gain

20

40

100

Gain Bandwidth Product

4.0

5.5

GHz

Collector Capacitance

0.5

1

pF

Insertion Power Gain

2

8.0

10.0

dB

Noise Figure

NF

2.0

3

dB

*

Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

Rank

FB

Marking

T93

20 to 100

2.8+0.2

_

1.5

0.65

+0.1

–0.15

2

1

3

Marking

PIN CONNECTIONS

1: Emitter

2: Base

3: Collector

Marking: T93

JEITA

Part No.