2SC5010 datasheet(2/9 Pages) CEL

部件名	2SC5010

功能描述	NPN SILICON EPITAXIAL TRANSISTOR

PDF	9 Pages

Scroll/Zoom	100%

制造商	CEL [California Eastern Labs]

网页	http://www.cel.com

标志

2 / 9 page

2SC5010

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

0.1

VCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

VEB = 1 V, IC = 0

150

VCE = 3 V, IC = 10 mA*1

Gain Bandwidth Product

12.0

GHz

VCE = 3 V, IC = 10 mA, f = 2 GHz

Feed-Back Capacitance

Cre

0.4

0.7

VCE = 3 V, IE = 0 , f = 1 MHz*2

Insertion Power Gain

|S21e|2

7.0

8.5

VCE = 3 V, IC = 10 mA, f = 2 GHz

= 3 V, IC = 3 mA, f = 2 GHz

*1 Pulse Measurement PW ≤ 350 μs, Duty Cycle ≤ 2 %

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance

bridge.

hFE Classification

Rank

Marking

hFE

75 to 150

NE68519 /

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