BAV20WS-V datasheet(1/2 Pages) SUNMATE

部件名	BAV20WS-V

功能描述	200mA Surface Mount Small Signal Fast Switching Diode

PDF	2 Pages

Scroll/Zoom	100%

制造商	SUNMATE [SUNMATE electronic Co., LTD]

网页	http://www.sunmate.tw/

标志

1 / 2 page

200mA Surface Mount Small Signal Fast Switching Diode

approx. 5.0 mg

1 of 2

Features

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Mechanical Data

·

K

L

M

J

C

H

BA

SOD-323

Dim

Min

Max

A

0.25

0.35

B

1.20

1.40

C

2.30

2.70

H

1.60

1.80

J

0.00

0.10

K

1.0

1.1

L

0.20

0.40

M

0.10

0.15

α

0°

8°

All Dimensions in mm

Case: SOD323 plastic case

Weight:

Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

·

Silicon Epitaxial Planar Diode

Component in accordance to RoHS 2002/95/EC

Lead (Pb)-free component

These diodes are also available in other

For general purpose

case styles including: the DO35 case with the type

designation BAV19 - BAV21, the MiniMELF case

with the type designation BAV100 - BAV103, the

SOT23 case with the type designation BAS19 -

BAS21 and the SOD123 case with the type desig-

nation BAV19W-V - BAV21W-V

and WEEE 2002/96/EC

BAV19WS-V—BAV21WS-V

1) Valid provided that leads are kept at ambient temperature

Parameter

Test condition

Part

Symbol

Value

Unit

Continuous reverse voltage

BAV19WS-V

VR

100

V

BAV20WS-V

VR

150

V

BAV21WS-V

VR

200

V

Repetitive peak reverse voltage

BAV19WS-V

VRRM

120

V

BAV20WS-V

VRRM

200

V

BAV21WS-V

VRRM

250

V

Forward continuous current

Tamb = 25 °C

IF

2501)

mA

Rectified current (average) half

wave rectification with resist.

load

Tamb = 25 °C

IF(AV)

2001)

mA

Repetitive peak forward current

f

≥ 50 Hz, θ = 180 °,

Tamb = 25 °C

IFRM

6251)

mA

Surge forward current

t < 1 s, Tj = 25 °C

IFSM

1A

Power dissipation

Tamb = 25 °C

Ptot

2001)

mW

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

VF

1.00

V

IF = 200 mA

VF

1.25

V

Leakage current

VR = 100 V

BAV19WS-V

IR

100

nA

VR = 100 V, Tj = 100 °C

BAV19WS-V

IR

15

µA

VR = 150 V

BAV20WS-V

IR

100

nA

VR = 150 V, Tj = 100 °C

BAV20WS-V

IR

15

µA

VR = 200 V

BAV21WS-V

IR

100

nA

VR = 200 V, Tj = 100 °C

BAV21WS-V

IR

15

µA

Dynamic forward resistance

IF = 10 mA

rf

5

Ω

Diode capacitance

VR = 0, f = 1 MHz

CD

1.5

pF

Reverse recovery time

IF = 30 mA, IR = 30 mA,

Irr = 3 mA, RL = 100 Ω

trr

50

ns

类似零件编号 - BAV20WS-V

制造商	部件名	数据表	功能描述
Vishay Siliconix	BAV20WS-V	85Kb / 6P	Small Signal Switching Diodes, High Voltage 31-Jul-06
	BAV20WS-V	73Kb / 5P	Small Signal Switching Diodes, High Voltage 26-Nov-10
	BAV20WS-V-G	79Kb / 4P	Small Signal Switching Diodes, High Voltage 16-May-12
	BAV20WS-V-GS08	85Kb / 6P	Small Signal Switching Diodes, High Voltage 31-Jul-06
	BAV20WS-V-GS18	85Kb / 6P	Small Signal Switching Diodes, High Voltage 31-Jul-06

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