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CPU165MM 数据表(PDF) 1 Page - International Rectifier |
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CPU165MM 数据表(HTML) 1 Page - International Rectifier |
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1 / 2 page ![]() C-407 CPU165MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Parameter Typ. Max. Units RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 1.5 RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction — 2.0 °C/W RθCS (MODULE) Case-to-Sink, flat, greased surface 0.1 — Wt Weight of module 20 (0.7) — g (oz) Thermal Resistance Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz). Product Summary Output Current in a Typical 5.0 kHz Motor Drive 14 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80%. Preliminary Data Sheet PD - 5.030 The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. Description Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 42 IC @ TC = 100°C Continuous Collector Current, each IGBT 23 ICM Pulsed Collector Current 120 A ILM Clamped Inductive Load Current 120 IF @ TC = 100°C Diode Continuous Forward Current 15 IFM Diode Maximum Forward Current 120 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V VISOL Isolation Voltage, any terminal to case, 1 minute 2500 VRMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT 83 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 33 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55 - 0.8 N•m) 1,2 4 5 9 6,7 11,12 Q1 Q2 D1 D2 IMS-1 Revision 2 Next Data Sheet Index Previous Datasheet To Order |
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