C-149

IGBT SIP MODULE

Features

Parameter

Typ.

Max.

Units

Junction-to-Case, each IGBT, one IGBT in conduction

—

3.5

Junction-to-Case, each diode, one diode in conduction

—

5.5

°C/W

Case-to-Sink, flat, greased surface

0.1

—

Wt

Weight of module

20 (0.7)

—

g (oz)

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

Output Current in a Typical 5.0 kHz Motor Drive

Product Summary

PD - 5.023B

Fast IGBT

CPV363MF

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Thermal Resistance

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current, each IGBT

16

Continuous Collector Current, each IGBT

8.7

Pulsed Collector Current

50

A

Clamped Inductive Load Current

50

Diode Continuous Forward Current

6.1

Diode Maximum Forward Current

50

Gate-to-Emitter Voltage

±20

V

Isolation Voltage, any terminal to case, 1 min.

2500

Maximum Power Dissipation, each IGBT

36

W

Maximum Power Dissipation, each IGBT

14

Operating Junction and

-40 to +150

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

5-7 lbf•in (0.55-0.8 N•m)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

Absolute Maximum Ratings

3

6

7

13

19

18

15

10

16

4

9

12

D1

D3

D5

D2

D4

D6

Q1

Q2

Q3

Q4

Q5

Q6

1

IMS-2

Revision 1

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