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PZT359 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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PZT359 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Any changing of specification will not be informed individual PZT359 PNP Silicon Planar O Output Capacitance Cob n-Time ton - Off-Time toff - - - 46 110 65 0 - - ns pF V VCB=-10V, IE=0, f=1MHz CC =-10V, IC=2A, IB1=-200mA,IB1=200mA 01-Jun-2002 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com Elektronische Bauelemente High Current Transistor *Measured under pulse condition. Pulse width 300 s, Duty Cycle 2% Spice parameter data is available upon request for this device. |
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