数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

IRF1302 数据表(PDF) 2 Page - International Rectifier

部件名 IRF1302
功能描述  Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF1302 数据表(HTML) 2 Page - International Rectifier

  IRF1302 Datasheet HTML 1Page - International Rectifier IRF1302 Datasheet HTML 2Page - International Rectifier IRF1302 Datasheet HTML 3Page - International Rectifier IRF1302 Datasheet HTML 4Page - International Rectifier IRF1302 Datasheet HTML 5Page - International Rectifier IRF1302 Datasheet HTML 6Page - International Rectifier IRF1302 Datasheet HTML 7Page - International Rectifier IRF1302 Datasheet HTML 8Page - International Rectifier IRF1302 Datasheet HTML 9Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
IRF1302
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.021 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.3
4.0
m
VGS = 10V, ID = 104A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
59
–––
–––
S
VDS = 15V, ID = 104A
–––
–––
20
µA
VDS = 20V, VGS = 0V
–––
–––
250
VDS = 16V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -20V
Qg
Total Gate Charge
–––
79
120
ID = 104A
Qgs
Gate-to-Source Charge
–––
18
27
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
31
46
VGS = 10V
td(on)
Turn-On Delay Time
–––
28
–––
VDD = 11V
tr
Rise Time
–––
130
–––
ID = 104A
td(off)
Turn-Off Delay Time
–––
47
–––
RG = 4.5
tf
Fall Time
–––
16
–––
VGS = 10V
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3600 –––
VGS = 0V
Coss
Output Capacitance
–––
2370 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
520
–––
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
5710 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
2370 –––
VGS = 0V, VDS = 16V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
3540 –––
VGS = 0V, VDS = 0V to 16V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 104A, VGS = 0V
trr
Reverse Recovery Time
–––
66
100
ns
TJ = 25°C, IF = 104A
Qrr
Reverse RecoveryCharge
–––
130
200
nC
di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
180
700
A



Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com